发明名称 |
METHODS OF RECYCLING A SUBSTRATE INCLUDING USING A CHEMICAL MECHANICAL POLISHING PROCESS |
摘要 |
In a method of recycling a substrate having an edge portion on which a stepped portion is formed, the substrate is chemically mechanically polished using a first slurry composition including fumed silica to remove the stepped portion. The substrate is then chemically mechanically polished using a second slurry composition including colloidal silica to improve the surface roughness of the substrate. The substrate having the edge region on which the stepped portion is formed may include a donor substrate used for manufacturing a silicon-on-insulator (SOI) substrate.
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申请公布号 |
US2008124930(A1) |
申请公布日期 |
2008.05.29 |
申请号 |
US20070945359 |
申请日期 |
2007.11.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LIM JONG HEUN;HONG CHANG-KI;YOON BO-UN;BAE DAE-LOK;YUN SEONG-KYU;CHOI SUK-HUN |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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