发明名称 METHODS OF RECYCLING A SUBSTRATE INCLUDING USING A CHEMICAL MECHANICAL POLISHING PROCESS
摘要 In a method of recycling a substrate having an edge portion on which a stepped portion is formed, the substrate is chemically mechanically polished using a first slurry composition including fumed silica to remove the stepped portion. The substrate is then chemically mechanically polished using a second slurry composition including colloidal silica to improve the surface roughness of the substrate. The substrate having the edge region on which the stepped portion is formed may include a donor substrate used for manufacturing a silicon-on-insulator (SOI) substrate.
申请公布号 US2008124930(A1) 申请公布日期 2008.05.29
申请号 US20070945359 申请日期 2007.11.27
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LIM JONG HEUN;HONG CHANG-KI;YOON BO-UN;BAE DAE-LOK;YUN SEONG-KYU;CHOI SUK-HUN
分类号 H01L21/302 主分类号 H01L21/302
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