| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide manufacturing method of semiconductor substrate, semiconductor substrate, semiconductor device, electro-optic device and electronic instrument, which are capable of obtaining a highly reliable matter which prevents floating effect of a substrate through simple process and, as a result, which has realized the reduction of a manufacturing cost. <P>SOLUTION: An insulating film 211 is provided on one surface side of a single crystal semiconductor substrate 200 to implant hydrogen ion into the single crystal semiconductor layer 200 from the side of the insulating film 211 to form a separating layer 212 therein, then, the hydrogen ion is implanted into the single crystal semiconductor substrate 200 from the side of the insulating film 211 to form a defective layer 213 in an interface with the insulating film 211. After forming the separating layer 212 and the defective layer 213, a supporting substrate 500 is bonded onto the insulating film 211 side of the single crystal semiconductor substrate 200. After the bonding process, the single crystal semiconductor substrate 200 is separated through the separating layer 212 and the single crystal semiconductor layer 220 is formed on the supporting substrate 500. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
