FORMATION METHOD OF POLYSILICON FILM

摘要

PROBLEM TO BE SOLVED: To provide a formation method of a polysilicon film which can eliminate characteristic dispersion without largely changing a laser anneal method. SOLUTION: Laser anneal is carried out by irradiating pulse laser beam while relatively moving a glass substrate 1 wherein an amorphous silicon film 2 is deposited. After anneal process, resist removal process (ashing) for removing resist by plasma treatment is carried out. The process time in resist removal process is made at least one and a half times as long as a time from resist removal start to resist removal finish. COPYRIGHT: (C)2008,JPO&INPIT