发明名称 Finned memory cells and the fabrication thereof
摘要 Methods and apparatus are provided. For an embodiment, a plurality fins is formed in a substrate so that the fins protrude from a substrate. After the plurality fins is formed, the fins are isotropically etched to reduce a width of the fins and to round an upper surface of the fins. A first dielectric layer is formed overlying the isotropically etched fins. A first conductive layer is formed overlying the first dielectric layer. A second dielectric layer is formed overlying the first conductive layer. A second conductive layer is formed overlying the second dielectric layer.
申请公布号 US2008121970(A1) 申请公布日期 2008.05.29
申请号 US20060514004 申请日期 2006.08.31
申请人 MICRON TECHNOLOGY, INC. 发明人 ARITOME SEIICHI
分类号 H01L29/788;H01L21/336 主分类号 H01L29/788
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