发明名称 |
SEMICONDUCTOR STRUCTURES INCORPORATING MULTIPLE CRYSTALLOGRAPHIC PLANES AND METHODS FOR FABRICATION THEREOF |
摘要 |
A semiconductor structure includes a semiconductor mesa located upon an isolating substrate. The semiconductor mesa includes a first end that includes a first doped region separated from a second end that includes a second doped region by an isolating region interposed therebetween. The first doped region and the second doped region are of different polarity. The semiconductor structure also includes a channel stop dielectric layer located upon a horizontal surface of the semiconductor mesa over the second doped region. The semiconductor structure also includes a first device located using a sidewall and a top surface of the first end as a channel region, and a second device located using the sidewall and not the top surface of the second end as a channel. A related method derives from the foregoing semiconductor structure. Also included is a semiconductor circuit that includes the semiconductor structure.
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申请公布号 |
US2008121949(A1) |
申请公布日期 |
2008.05.29 |
申请号 |
US20060556833 |
申请日期 |
2006.11.06 |
申请人 |
ANDERSON BRENT A;NOWAK EDWARD J;RANKIN JED H |
发明人 |
ANDERSON BRENT A.;NOWAK EDWARD J.;RANKIN JED H. |
分类号 |
H01L27/12;H01L21/84 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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地址 |
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