发明名称 |
PREVENTION OF BACKSIDE CRACKS IN SEMICONDUCTOR CHIPS OR WAFERS USING BACKSIDE FILM OR BACKSIDE WET ETCH |
摘要 |
A method of preventing the formation of cracks on the backside of a silicon (Si) semiconductor chip or wafer during the processing thereof. Also provided is a method for inhibiting the propagation of cracks, which have already formed in the backside of a silicon chip during the processing thereof and prior to the joining thereto of a substrate during the fabrication of an electronic package. The methods entail either treating the backside with a wet etch, or alternatively, applying a protective film layer thereon prior to forming an electronic package incorporating the chip or wafer.
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申请公布号 |
US2008122037(A1) |
申请公布日期 |
2008.05.29 |
申请号 |
US20060462124 |
申请日期 |
2006.08.03 |
申请人 |
DAUBENSPECK TIMOTHY H;GAMBINO JEFFREY P;LASKY JEROME B;MUZZY CHRISTOPHER D;SAUTER WOLFGANG |
发明人 |
DAUBENSPECK TIMOTHY H.;GAMBINO JEFFREY P.;LASKY JEROME B.;MUZZY CHRISTOPHER D.;SAUTER WOLFGANG |
分类号 |
H01L29/34;H01L21/66 |
主分类号 |
H01L29/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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