| 摘要 |
A method for manufacturing semiconductor devices containing capacitors, the method includes: forming a second inter-layer insulating film over a first inter-layer insulating film; forming holes in the second inter-layer insulating film; forming a first electroconductive film covering the inner faces of the holes to form storage electrodes; forming thereafter a supporting film so as to fill the holes; exposing the outer side faces of the storage electrodes by removing at least part of the second inter-layer insulating film; exposing thereafter the inner side faces of the storage electrodes by removing the supporting films in the holes; forming a dielectric film covering the inner side faces and the outer side faces of the storage electrodes; and forming a second electroconductive film over the dielectric film to form a counter electrode.
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