MRAM

摘要

An MRAM includes: a plurality of magnetic memory cells each having a magnetoresistive element; and a magnetic field application unit. The magnetic field application unit applies an offset adjusting magnetic field of a certain direction to the magnetic memory cells from outside the magnetic memory cells. When no offset adjusting magnetic field is present, the data stored in the magnetic memory cells are all identical. With this configuration, it is difficult to steal data from the MRAM.