METHOD OF CLUSTERING SEQUENTIAL PROCESSING FOR A GATE STACK STRUCTURE
摘要
<p>A method of forming a gate dielectric comprising silicon and oxygen is provided. The gate dielectric may also include nitrogen or another high k material. In one aspect, forming the gate dielectric includes annealing a substrate in an oxidizing atmosphere to form a silicon oxide layer, depositing a silicon nitride layer or a high k layer on the silicon oxide layer by a vapor deposition, oxidizing an upper surface of the silicon nitride layer or high k layer, and then annealing the substrate. The gate dielectric may be formed within an integrated processing system.</p>
申请公布号
WO2008064246(A2)
申请公布日期
2008.05.29
申请号
WO2007US85276
申请日期
2007.11.20
申请人
APPLIED MATERIALS, INC.;CHUA, THAI CHENG;OLSEN, CHRISTOPHER SEAN;CZARNIK, CORY;CONTI, GIUSEPPINA
发明人
CHUA, THAI CHENG;OLSEN, CHRISTOPHER SEAN;CZARNIK, CORY;CONTI, GIUSEPPINA