NON-VOLATILE MEMORY DEVICE, AND METHOD OF MANUFACTURING THEREOF, AND METHOD OF PROGRAMMING THEREOF

摘要

A non volatile memory device, a manufacturing method thereof and a programming method thereof are provided to prevent variation of threshold voltage of a memory cell by preventing transfer of hot carrier into the memory cell, and simultaneously minimizing the capacitance coupling between a word line and a select line. A second insulating layer(218) is formed on a semiconductor substrate(200) including a conductive shielding line(216p). A contact hole is formed on the second insulating layer so as to expose a part of a drain(212d), the conductive shielding line and a source contact plug(216s). A drain contact plug(220d) is formed within the contact hole above the drain. At this time, an upper part contact plug(220) is formed in the contact hole above the conductive shielding line and the source contact plug.