| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a gallium nitride compound semiconductor light-emitting element which is excellent in light extraction efficiency and light distribution uniformity. <P>SOLUTION: The light emitting element consists of a substrate and a gallium nitride compound semiconductor layer laminated on the substrate. In the gallium nitride compound semiconductor element, at least in one surface of light emitting element side surfaces, a lower part (a substrate side) of the semiconductor layer is in a reverse tapered shape tilting 5-85° to a substrate main surface, and an upper part is formed in a forward tapered shape tilting 95-175° to the substrate main surface. <P>COPYRIGHT: (C)2008,JPO&INPIT |
