| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film piezoelectric resonator by which yield can be increased and the thin film piezoelectric resonator. <P>SOLUTION: The method of manufacturing the thin film piezoelectric resonator comprises the steps of: forming a cavity 12a having first sidewalls 13 and a first bottom 14 on the upper surface of a semiconductor substrate 11; forming grooves 12b each of which has second sidewalls 25 with faces intersecting with the first bottom 14 at an angle ≥ 90° and a second bottom 26; depositing a CVD oxide film 27 having voids 28 in respective grooves 12b and having film thickness over the upper surface of the semiconductor substrate 11 in the bottom 14 in a decompressed atmosphere; processing the CVD oxide film 27 to substantially the same surface as the upper surface of the semiconductor substrate 11 and forming an upper member 31 in which a resonance part provided with a through hole 34 having an aperture on a position opposed to the groove 12b through the CVD oxide film 27 is formed, on the upper surface of the semiconductor substrate 11 and the upper surface of the CVD oxide film 27; and introducing etchant via the through hole 34 and etching and removing the CVD oxide film 27. <P>COPYRIGHT: (C)2008,JPO&INPIT |
