LOW-VOLTAGE IMAGE SENSOR AND SENSING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To reduce image lag and increase well capacity of a photodiode by changing the structure and driving method of a transfer transistor of a typical 4-transistor CMOS image sensor and employing a deep depletion operation and a multiple reset operation of the transfer transistor. SOLUTION: An image sensor of the present invention includes: a light receiving device; a signal conversion unit including a transfer transistor having a plurality of transfer gates and for converting photocharges generated by the light receiving device into a voltage to output the voltage; and a sensing control unit for generating at least two reset signals and/or at least two transfer signals applied to the transfer gates of the transfer transistor during a one-time photosensing cycle. COPYRIGHT: (C)2008,JPO&INPIT