| 摘要 |
PROBLEM TO BE SOLVED: To create an AlGaN/GaN-HEMT or a MIS-type AlGaN/GaN-HEMT which has a contact-resistance value lower than conventional ones and has a uniform device characteristic. SOLUTION: In the AlGaN/GaN-HEMT manufacturing method, a semiconductor main body 110 wherein the laminated structure comprising a buffer layer 102 present on a substrate 100, a UID-GaN layer 104 present on the buffer layer, and a UID-AlGaN layer 108 present above the UID-GaN layer is included is prepared. Next, an insulating film 112 is so pattern-formed on a first principal surface 111 of the UID-AlGaN-layer surface of this semiconductor main body as to selection-regrow directly an n<SP>+</SP>-GaN layer 116 on the semiconductor-main-body region other than the insulating-film region, by using this pattern-formed insulating film 112' as a mask, without any etching processing of the semiconductor-main-body surface. Further, a formation predetermining region 117 of an ohmic-electrode is so block-formed on this selection-regrown n<SP>+</SP>-GaN layer as to form an ohmic electrode 122. Next, a formation predetermining region 123 of a gate electrode is so block-opened in the insulating-film region as to form a gate electrode 124. COPYRIGHT: (C)2008,JPO&INPIT
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