| 摘要 |
A sense amplifier of a semiconductor device is disclosed. The sense amplifier includes first and second PMOS transistors connected to each other at sources of the first and second PMOS transistors, and first and second NMOS transistors connected to each other at sources of the first and second NMOS transistors, to detect and amplify a voltage difference between a specific bit line and a complementary bit line. The second NMOS transistor and second PMOS transistor are connected to the specific bit line via a column select switch at drains of the second NMOS transistor and second PMOS transistor. The first PMOS transistor and first NMOS transistor are connected to the specific bit line via the column select switch at gates of the first PMOS transistor and first NMOS transistor. The second NMOS transistor, the second PMOS transistor, the first PMOS transistor, and the first NMOS transistor are arranged, in this order, downstream from the column select switch.
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