| 摘要 |
<p>A flash memory device and an erasing method thereof are provided to increase effective thickness of a blocking insulating layer by forming a first and a second conductive layers and increasing the thickness of a depletion layer between the conductive layers, thereby reducing backward tunneling charges efficiently. A tunnel insulating layer(102) is formed on a semiconductor substrate(100). A charge trap layer(104) is formed above the tunnel insulating layer. A blocking insulating layer(106) is formed above the charge trap layer. A control gate is formed above the blocking insulating layer. Wherein the control gate includes a first conductive layer(108) which is doped with n-type impurity, and a second conductive layer(112) which is doped with p-type impurity.</p> |
