发明名称 RESET CIRCUIT OF HIGH-VOLTAGE CIRCUIT
摘要 <p><P>PROBLEM TO BE SOLVED: To prevent the deterioration of a reset transistor when power interruption is caused to occur during program operation or program erasing operation. <P>SOLUTION: Even if a power supply interruption is caused to occur during the program erasing the operation of an EEPROM, a system is not reset at a time based on a first reset signal POR from a power-on reset circuit 25 and the system is reset based on the first reset signal POR and a low-voltage detection signal LD from a low-voltage detection circuit 24. Thus, a reset MOS transistor 133 of a high-voltage switching circuit 13 is not turned on in a state that a high voltage HV is supplied, so that the reset MOS transistor 133 and transistors of circuits where high voltages are supplied in the same manner with this transistor can be protected. <P>COPYRIGHT: (C)2008,JPO&INPIT</p>
申请公布号 JP2008125267(A) 申请公布日期 2008.05.29
申请号 JP20060307460 申请日期 2006.11.14
申请人 SANYO ELECTRIC CO LTD;SANYO SEMICONDUCTOR CO LTD 发明人 YOSHIKAWA SADAO;RAI TOSHIKI
分类号 H02M3/07;G11C16/06;H01L21/822;H01L27/04 主分类号 H02M3/07
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