| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride LED with improved luminous output power by improving light extraction efficiency. <P>SOLUTION: A nitride semiconductor light emitting diode element 1 is provided with a nitride semiconductor layer 12 having a bottom surface and an upper surface and including a light emitting layer 12b inside, and a holding substrate 11 comprising a metal is joined to the bottom surface side of the nitride semiconductor layer 12. On the bottom surface of the nitride semiconductor layer 12, a light-reflecting recess portion A1 reflecting the light generated by the light emitting layer 12b to the upper surface side is formed. In the nitride semiconductor light emitting diode element 1, the light propagated in the nitride semiconductor layer 12 in the layer direction among the light generated by the light emitting layer 12b is reflected by the light-reflecting recess portion A1 to change the travelling direction. Thus, the rate of the light incident on the upper surface of the nitride semiconductor layer 12 within a critical angle is increased. Thus, light extraction efficiency is improved, compared with that of the conventional nitride semiconductor light emitting diode elements. <P>COPYRIGHT: (C)2008,JPO&INPIT |
