| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-breakdown-voltage semiconductor device for reducing a loss in the entire range up to a heavy load from a light load. SOLUTION: An n-type resurf region 202 and a p-type base region 206 adjacent to each other are formed in surface portions of a p-type semiconductor substrate 201. An n-type emitter region 208 is formed in the base region 206 to be spaced from the resurf region 202. A gate insulating film 203 is formed to cover a portion of the base region 206 disposed between the emitter region 208 and the resurf region 202, and a gate electrode 207 is formed on the gate insulating film 203. A p-type top semiconductor layer 205 electrically connected to the base region 206 is formed in a surface portion of the resurf region 202. A p-type collector region 215 is formed in a surface portion of the resurf region 202 to be spaced from the top semiconductor layer 205. The collector region 215 and the top semiconductor layer 205 have substantially the same impurity concentration and are disposed at substantially the same depth. COPYRIGHT: (C)2008,JPO&INPIT
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