| 摘要 |
PROBLEM TO BE SOLVED: To provide for forming a fine pattern of a semiconductor device utilizing a double patterning process, which achieves a contact hole pattern of a fine pitch exceeding the resolution limit in a photolithography process. SOLUTION: The method comprises a step of forming a plurality of first hard mask patterns 130, a step of forming buffer layers 140 on side walls of the first mask patterns 130 and forming second hard mask patterns 150a self-aligned by the first hard mask patterns 130, a step of forming mask patterns 160 so as to cover a part of the buffer layers 140 between the first mask patterns 130 and the second mask patterns 150a, and a step of utilizing the mask patterns 160 and the first and second mask patterns 130, 150a as etching masks, etching the exposed regions of the buffer layers 140, and etching exposed films to be etched, to form contact holes. COPYRIGHT: (C)2008,JPO&INPIT
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