| 摘要 |
PROBLEM TO BE SOLVED: To reduce the resistance of Cu wiring layers to be formed in a manufacturing method for a semiconductor device comprising a step for forming an opening partitioned by an inner wall surface on an insulating film, a step for covering the inner wall surface with a Cu-Mn alloy layer such that the Cu-Mn alloy layer may come in direct contact with the inner wall surface, a step for depositing a first Cu layer on the Cu-Mn alloy layer, a step for depositing a second Cu layer on the first Cu layer and filling the opening with the second Cu layer, a step for forming a barrier layer on the inner wall surface using the reaction between Mn atom contained in the Cu-Mn alloy layer and the insulating film, and a step for removing the unreacted Mn atom contained in the Cu-Mn alloy layer from the top surface of the second Cu layer via the first and second Cu layers. SOLUTION: After the Cu-Mn alloy layer is formed, a step is provided for depositing the first Cu layer on the Cu-Mn alloy layer without exposure to the atmospheric air. COPYRIGHT: (C)2008,JPO&INPIT
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