| 摘要 |
PROBLEM TO BE SOLVED: To restrain an electric field from concentrating around the channel upper edge of a FinFET and to provide a semiconductor device improved in manufacturing yield. SOLUTION: The FinFET is equipped with a silicon layer 14, which is deposited on the surface of a silicon substrate 11 to form a source diffusion layer 24a, a drain diffusion layer 24b, and a channel region, and a gate electrode provided with a pair of first electrode parts 18, which are deposited on the silicon substrate 11 through an element isolation layer 12 confronting the side face of the channel through a side gate insulating film 16, and a second electrode part 19, which confronts the top surface of the channel through a top gate insulating film 15 and comes into contact with the tops of the first electrode parts 18. COPYRIGHT: (C)2008,JPO&INPIT
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