Semiconductor device including a high voltage generation circuit and method of a generating high voltage

摘要

A semiconductor memory device comprises a first pump clock generator configured to generate a first pump clock signal based on a first power supply voltage. The device also comprises a first charge pump configured to generate a first pump output voltage in response to the first pump clock signal. The device also comprises a second pump clock generator configured to generate a second pump clock signal based on the first pump output voltage. The device also comprises a second charge pump configured to generate a second pump output voltage in response to the second pump clock signal. The device also comprises a third pump clock generator configured to generate a third pump clock signal based on the first power supply voltage. The device also comprises a third charge pump configured to generate a third pump output voltage in response to the third pump clock signal.