NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A nonvolatile semiconductor storage device (10) is provided with a substrate (11); a lower layer electrode wiring (15) formed on the substrate (11); an interlayer insulating layer (16), which is arranged on the substrate (11) including the lower layer electrode wiring (15), and has a contact hole formed at a position facing the lower layer electrode wiring (15); a resistance variable layer (18) connected to the lower layer electrode wiring (15); and a non-ohmic element (20), which is connected to the resistance variable layer (18) and is formed on the resistance variable layer (18). The non-ohmic element (20) is composed of a laminated configuration of a plurality of semiconductor layers or a laminated configuration of a metal electrode layer and an insulator layer or a laminated configuration of a metal electrode layer and a semiconductor layer. One layer of the laminated configurations is embedded in the contact hole, and the semiconductor layer or the insulator layer among other layers of the laminated configuration has an area larger than the opening of the contact hole and is formed on the interlayer insulating layer (16).