| 摘要 |
The invention describes an integrated-photonics arrangement, implementabl e in a multi-guide vertical integration structure composed from IH-V semicon ductors and grown in one epitaxial growth run, that allows for vertical and lateral splitting of optical signals co- or bi-directionally propagating in the common passive waveguide into plurality of the vertically integrated pas sive or active wavelength-designated waveguides, therefore, enabling the wav elength-designated waveguides operating in different wavelengths to be monol ithically integrated onto the same substrate and connected to the shared pas sive waveguide. In the exemplary embodiments of the invention, two active wa velength-designated waveguides, each of which either laser or photodetector, are vertically integrated with a common passive waveguide connected to the input / output optical port shared by both operating wavelengths, to form a single- fiber, two-wavelength receiver (both wavelength-designated waveguide s are waveguide photodetectors) or transmitter (both wavelength-designated w aveguides are edge- emitting semiconductor injection lasers) or transceiver (one wavelength-designated waveguide is waveguide photodetector and the othe r - edge-emitting semiconductor injection laser). Advantageously to the prev ious art, the proposed vertical splitting and lateral routing allows for a r educed footprint size while greatly improving design flexibility and /or dev ice performance.
|
