| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a transistor increased in device gain, bandwidth and operating frequency. <P>SOLUTION: A first spacer layer is on at least part of the surface of an active region between a gate electrode and a drain electrode and between the gate electrode and a source electrode. The gate comprises a generally T-shaped top portion that extends toward the source and drain electrodes. A field plate is on the spacer layer and under the overhang of at least one section of the gate top portion. The field plate is at least partially covered by a second spacer layer. The second spacer layer is on at least part of the surface of the first active layer and between the gate and the drain and between the gate and the source. At least one conductive path electrically connects the field plate to the source electrode or the gate. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
