| 摘要 |
A voltage generation circuit and semiconductor memory device including the same are provided. The voltage generation circuit includes: a voltage level detector, which detects a level of a first high voltage to generate a first high voltage level detection signal and detects a level of a second high voltage to generate a second high voltage level detection signal; a control signal generator, which generates at least four pumping control signals in sequence when the first high voltage level detection signal is active, generates a control signal when the first high voltage level detection signal is inactive, and generates a first one of the at least four pumping control signals in response to a level of a power supply voltage; and a voltage generator, which pumps a boost node in response to the at least four pumping control signals to generate the first high voltage and transmits charge from the boost node to a second high voltage generation terminal in response to the control signal to generate the second high voltage.
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