发明名称 |
Ge short wavelength infrared imager |
摘要 |
A germanium (Ge) short wavelength infrared (SWIR) imager and associated fabrication process are provided. The imager comprises a silicon (Si) substrate with doped wells. An array of pin diodes is formed in a relaxed Ge-containing film overlying the Si substrate, each pin diode having a flip-chip interface. There is a Ge/Si interface, and a doped Ge-containing buffer interposed between the Ge-containing film and the Ge/Si interface. An array of Si CMOS readout circuits is bonded to the flip-chip interfaces. Each readout circuit has a zero volt diode bias interface.
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申请公布号 |
US2008121805(A1) |
申请公布日期 |
2008.05.29 |
申请号 |
US20060592465 |
申请日期 |
2006.11.04 |
申请人 |
TWEET DOUGLAS J;MAA JER-SHEN;LEE JONG-JAN;HSU SHENG TENG |
发明人 |
TWEET DOUGLAS J.;MAA JER-SHEN;LEE JONG-JAN;HSU SHENG TENG |
分类号 |
H01L31/028;H01L31/18 |
主分类号 |
H01L31/028 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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