METHOD FOR MANUFACTURING LIGHT-EMITTING DIODE, LIGHT-EMITTING DIODE, LIGHTSOURCE CELL UNIT, LIGHT-EMITTING DIODE BACKLIGHT, LIGHT-EMITTING DIODE ILLUMINATING DEVICE, LIGHT-EMITTING DIODE DISPLAY, AND ELECTRONIC APPARATUS

摘要

A light-emitting diode which has a significantly high luminous efficiency and which can be manufactured at a reasonable cost by one epitaxial growth and a manufacturing method thereof are provided. The above method includes: preparing a substrate provided with convex portions on one major surface, the convex portions being formed from a dielectric substance which is different from the substrate and which has a refractive index of 1.7 to 2.2; growing a first nitride-based III-V compound semiconductor layer in a concave portion on the substrate; growing a second nitride-based III-V compound semiconductor layer on the substrate from the first nitride-based III-V compound semiconductor layer in a lateral direction; and growing, on the second nitride-based III-V compound semiconductor layer, a first conductive type third nitride-based III-V compound semiconductor layer, an active layer, and a second conductive type fourth nitride-based III-V compound semiconductor layer.