STRUCTURES AND DESIGNS FOR IMPROVED EFFICIENCY AND REDUCED STRAIN III-NITRIDE HETEROSTRUCTURE SEMICONDUCTOR DEVICES
摘要
The present invention provides semiconductor structures, and methods for making semiconductor structures, comprising an InA1N and/or InA1GaN strain relief layer that have a lattice constant larger than that of a substrate film upon which it is grown such that it allows the growth of strain-free or low-strain semiconductor devices.
申请公布号
WO2007103419(A3)
申请公布日期
2008.05.29
申请号
WO2007US05806
申请日期
2007.03.06
申请人
THE ARIZONA BOARD OF REGENTS, A BODY CORPORATE ACTING ON BEHALF OF ARIZONA STATE UNIVERSITY;SRINIVASAN, SRIDHAR;PONCE, FERNANDO, A.