发明名称 SEMICONDUCTOR SURFACE PROTECTING METHOD
摘要 <p>Provided are a semiconductor surface protecting method and surface protecting sheet employing a material having adequate conformability for irregularities on semiconductor wafer circuit sides and sufficient rigidity as a support during grinding, and which does not become fluid with repeated temperature increases. Also provided is a surface protecting sheet for protection of the circuit side in the step of back side grinding of a semiconductor wafer, the surface protecting sheet having a polymeric film material with a surface protecting layer thereon that may become fluid upon heating and which hardens upon exposure to radiation or upon heating.</p>
申请公布号 EP1683195(B1) 申请公布日期 2008.05.28
申请号 EP20040795319 申请日期 2004.10.15
申请人 3M INNOVATIVE PROPERTIES COMPANY 发明人 NODA, KAZUKI
分类号 H01L21/68;B24B7/22;B24B37/30;B24B55/00;C09J7/02;H01L21/00;H01L21/304 主分类号 H01L21/68
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