METHOD OF CRYSTALLIZATION IN SEMI-CONDUCTOR

摘要

A method for crystallizing semiconductor is provided to prevent electrical characteristics of polysilicon thin film from changing by projecting a laser beam twice onto the entire target surface while varying its moving pitch during a laser annealing process. A method for crystallizing semiconductor comprises the steps of: moving a laser beam(100) to a first pitch and primarily projecting a laser beam onto an amorphous silicon thin film; moving the laser beam to a second pitch(P2) and secondarily projecting the laser beam onto an amorphous silicon thin film(104b) on which the laser beam is primarily projected, for inducing crystallization of the amorphous silicon thin film.