| 摘要 |
<p>An anti-reflective hard mask composition is provided to realize high etching selectivity and excellent resistance against multi-etching and to minimize reflection between a resist layer and a backside layer. An anti-reflective hard mask composition comprises: (a) an aromatic ring-containing polymer comprising a compound represented by the following formula 1; and (b) an organic solvent. In formula 1, each of m and n is equal to or greater than 1 and less than 190, wherein m+n is 190 or less; R1, R2 and R3 are the same or different, and represent any one substituent of H, OH, C1-C10 alkyl, C6-C10 aryl, allyl and halogen atoms; and R2 and R4 are the same or different, and represent -CH2- and the following formula.</p> |
