发明名称 |
Method for producing single crystal silicon solar cell and single crystal silicon solar cell |
摘要 |
<p>There is disclosed a method for producing a single crystal silicon solar cell comprising the steps of: implanting hydrogen ions or rare gas ions into a single crystal silicon substrate through an ion implanting surface thereof to form an ion implanted layer in the single crystal silicon substrate; closely contacting the single crystal silicon substrate and a transparent insulator substrate with each other via a transparent adhesive while using the ion implanting surface as a bonding surface; curing the transparent adhesive; applying an impact to the ion implanted layer to mechanically delaminate the single crystal silicon substrate thereat to leave a single crystal silicon layer; forming a plurality of diffusion regions having a second conductivity type at the delaminated surface side of the single crystal silicon layer, in a manner that a plurality of first conductivity-type regions and a plurality of second conductivity-type regions are present at the delaminated surface of the single crystal silicon layer; forming pluralities of individual electrodes on the pluralities of first and second conductivity-type regions of the single crystal silicon layer, respectively; and forming collector electrodes for the individual electrodes, respectively. There can be provided a single crystal silicon solar cell as a see-through type solar cell, including a thin-film light conversion layer made of single crystal silicon having a higher crystallinity.</p> |
申请公布号 |
EP1926149(A2) |
申请公布日期 |
2008.05.28 |
申请号 |
EP20070020916 |
申请日期 |
2007.10.25 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
ITO, ATSUO;AKIYAMA, SHOJI;FURUYA, MASAHIRO;KAWAI, MAKOTO;TANAKA, KOICHI;KUBOTA, YOSHIHIRO;TOBISAKA, YUUJI |
分类号 |
H01L31/0392;H01L31/0224;H01L31/068;H01L31/18 |
主分类号 |
H01L31/0392 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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