| 摘要 |
<p>A semiconductor memory is provided to embody a fin-type memory cell having a suitable structure for mixed mounting such that the fin-type memory cell has a logic circuit made of fin-FET(field effect transistor) by including a floating gate formed along the lateral surface of a fin-type active region and two control gate electrodes formed at both sides of the floating gate. A memory cell array is composed of memory cells(MC) that are arranged in first and second directions perpendicular to each other in an array shape. Wordlines are extended in a third direction between the first and second directions, connected to the gates of the memory cells. The memory cells commonly connected one of the wordlines. A source line is extended in the first direction, connected to an end part of the source of the memory cell. A bitline is extended in the second direction, connected to an end part of the drain of the memory cell.</p> |
