| 摘要 |
A semiconductor device and a method of manufacturing the same are provided to prevent discontinuous step coverage and overhangs from occurring by forming ruthenium oxide from ruthenium. A semiconductor device includes an inter-metallic insulation layer(210), a first layer(220), a second layer(230), and a metal wire(250). The inter-metallic insulation layer is provided on a semiconductor substrate(200) and has a via hole. The first layer is disposed in the via hole and is made of ruthenium. The second layer is disposed on the first layer and is made of ruthenium oxide. The metal wire is disposed on the second layer and is made of copper material. The ruthenium and radical are reacted with each other by an oxidation current to form the ruthenium oxide. The first layer has a thickness ranging from 100 Å to 800 Å. The second layer has a thickness ranging from 50 Å to 200 Å.
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