| 摘要 |
A plasma processing apparatus having a control electrode in a focus ring is provided to perform a uniform plasma process on the front surface of a wafer by installing a control electrode capable of applying bias to the inside of a focus ring. A chuck(130) is installed in a chamber(110). The outer circumferential surface of the chuck is surrounded by a focus ring(140) that includes an insulation body and a control electrode incorporated in the insulation body. A voltage generating part can apply an RF voltage, a direct voltage with a predetermined polarity or a pulse voltage to the control electrode, electrically connected to the control electrode. A cooling part can be installed along the inner or lower surface of the focus ring.
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