发明名称 |
Method for growing an AlN crystal |
摘要 |
Affords large-diametric-span AlN crystals, applicable to various types of semiconductor devices, with superior crystallinity, a method of growing the AlN crystals, and AlN crystal substrates. The AlN crystal growth method is a method in which an AlN crystal (4) is grown by vapor-phase epitaxy onto a seed crystal substrate (2) placed inside a crystal-growth compartment (24) within a crystal-growth vessel (12) provided within a reaction chamber, and is characterized in that during growth of the crystal, carbon-containing gas is supplied to the inside of the crystal-growth compartment (24). |
申请公布号 |
EP1925697(A1) |
申请公布日期 |
2008.05.28 |
申请号 |
EP20060768027 |
申请日期 |
2006.07.10 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
MIZUHARA, NAHO;MIYANAGA, MICHIMASA;KAWASE, TOMOHIRO;FUJIWARA, SHINSUKE |
分类号 |
C30B23/02;C30B23/06;C30B25/02;C30B29/40 |
主分类号 |
C30B23/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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