Transistors or memory capacitors comprising a composition of HfO2 with enhanced dielectric constant

摘要

The present invention is related to a novel composition comprising HfO2 and a second compound, charactherized in that at least a part of the composition is in the cubic crystallographic phase. The novel composition advantageously is stable at temperatures up to 1200 degrees C. The novel composition advantageously has a dielectric value that is higher than the dielectric value of pure HfO2. The novel composition can be used for the application of dielectric material in memory capacitor applications and for the application as gate dielectric in transistor applications.