| 摘要 |
<p>A trench gate MOSFET device and a manufacturing method thereof are provided to get a larger channel concentration than that of a stripe type trench by forming trenches out of structures which have different widths and shapes and are interconnected each other. A base region(54) of a second conductive type is formed, and has a predetermined depth from the surface of a semiconductor substrate(50). A source region(56) of a first conductive type is formed above the base region. A trench comprises a first and a second trenches(T1,T2) which are formed with different widths and shapes, and the trench is formed passing through the source region and the base regions vertically. A gate oxide layer is formed at the surface within the trench. A gate conductive layer(60) is formed on the gate oxide layer within the trench.</p> |
