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发明名称
Low temperature Cu wafer bonding method using high pressure hydrogen anneal
摘要
申请公布号
KR100833407(B1)
申请公布日期
2008.05.28
申请号
KR20060071405
申请日期
2006.07.28
申请人
发明人
分类号
H01L21/20
主分类号
H01L21/20
代理机构
代理人
主权项
地址
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