首页
产品
黄页
商标
征信
会员服务
注册
登录
全部
|
企业名
|
法人/股东/高管
|
品牌/产品
|
地址
|
经营范围
发明名称
Method for manufacturing a semiconductor element with a metal gate electrode in a double trench structure
摘要
申请公布号
EP1858065(A3)
申请公布日期
2008.05.28
申请号
EP20070009106
申请日期
2007.05.05
申请人
UNITED MONOLITHIC SEMICONDUCTORS GMBH
发明人
BEHAMMER, DAG
分类号
H01L21/335;H01L21/28
主分类号
H01L21/335
代理机构
代理人
主权项
地址
您可能感兴趣的专利
DEVICE AND METHOD FOR EVALUATING PERFORMANCE FOR QUADRATURE MODULATOR
WAVELENGTH CONVERTING ELEMENT USING HIGH-TEMPERATURE SUPERCONDUCTOR
THIN SHEET-LIKE HEATING ELEMENT
ANISOTROPIC CONDUCTIVE CONNECTOR
PRODUCTION OF ELECTROPHOTOGRAPHIC SELENIUM PHOTORECEPTOR
IMAGE FORMING METHOD
METHOD FOR DRIVING LIQUID CRYSTAL DEVICE
PLASMA DISPLAY DEVICE
PHOTOGRAPHING OPTICAL SYSTEM
PULSE COUNTER
ELECTRIC APPARATUS MONITORING SYSTEM AND ABNORMAL OPERATION ALERTING SYSTEM
GAS SENSOR
RADIANT TUBE SUPERIOR IN HIGH-TEMPERATURE OXIDATION RESISTANCE AND INTERNAL STRUCTURE MEMBER, AND MANUFACTURE THEREOF
GAS DISCHARGE PANEL AND GAS LUMINESCENT DEVICE
PLASMA DISPLAY PANEL HOLDING TOOL AND ITS METHOD
STRATOSPHERIC COMMUNICATION SYSTEM
WAVEFORM EQUALIZER, MOBILE RADIO EQUIPMENT USING THE SAME, BASE STATION RADIO EQUIPMENT AND MOBILE COMMUNICATION SYSTEM
REMOTE ADJUSTING DEVICE FOR ANTENNA
SKIP PROCESSING METHOD OF DEFECTIVE POSITION IN DISK DEVICE
SURFACE EMITTING TYPE SEMICONDUCTOR LASER ELEMENT
