发明名称 METHODS FOR CHARACTERIZING DEFECTS ON SILICON SURFACES, ETCHING COMPOSITION FOR SILICON SURFACES AND PROCESS OF TREATING SILICON SURFACES WITH THE ETCHING COMPOSITION
摘要 <p>Methods for characterizing defects on silicon surfaces, etching composition for silicon surfaces and process of treating silicon surfaces with the etching composition The present invention relates to a method for characterizing defects on silicon surfaces, in particular silicon wafers, a method for treating silicon surfaces with an etching solution and the etching solution to be employed in the method and process of the present invention.</p>
申请公布号 SG142223(A1) 申请公布日期 2008.05.28
申请号 SG20070066764 申请日期 2007.09.11
申请人 S.O.I.TEC SILICON ON INSULATOR TECHONOLOGIES 发明人 ABBADIE ALEXANDRA;MAEHLISS JOCHEN;KOLBESEN BERND
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