发明名称 Cavity structure for semiconductor structures
摘要 A method for providing a cavity structure on a semiconductor device is provided. The method of forming the cavity structure, which may be particularly useful in packaging an image sensor, includes forming a spacer layer over a substrate. The spacer layer may be formed from a photo-sensitive material which may be patterned using photolithography techniques to form cavity walls surrounding dies on the wafer. A packaging layer, such as a substantially transparent layer, may be placed directly upon the cavity walls prior to curing. In another embodiment, the cavity walls are cured, an adhesive is applied to a surface of the cavity walls, and the packaging layer placed upon the adhesive. Thereafter, the wafer may be diced and the individual dies may be packaged for use.
申请公布号 US7378724(B2) 申请公布日期 2008.05.27
申请号 US20050166454 申请日期 2005.06.24
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 YU HSIU-MEI;HUANG GIL;YU CHIEN-TUNG;CHEN OWEN
分类号 H01L23/02 主分类号 H01L23/02
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