| 摘要 |
In a pattern formation method, pattern exposure is performed by selectively irradiating, with exposing light, a resist film formed on a substrate and made of a resist including a carboxylic acid derivative. A first resist pattern is formed by developing the resist film after the pattern exposure, and subsequently, the first resist pattern is exposed to a solution including a reducing agent for reducing the carboxylic acid derivate. Thereafter, a water-soluble film including a crosslinking agent for causing crosslinking with a material of the first resist pattern is formed on the first resist pattern having been exposed to the solution. Subsequently, a crosslinking reaction is caused by annealing the water-soluble film between a portion of the water-soluble film and a portion of the first resist pattern in contact with each other on the sidewall of the first resist pattern, and then, a portion of the water-soluble film not reacted with the first resist pattern is removed. Thus, a second resist pattern made of the first resist pattern and a portion of the water-soluble film remaining on the sidewall of the first resist pattern is formed.
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