Wafer-level sealed microdevice having trench isolation and methods for making the same

摘要

A microdevice ( 20 ) having a hermetically sealed cavity ( 22 ) to house a microstructure ( 26 ). The microdevice ( 20 ) comprises a substrate ( 30 ), a cap ( 40 ), an isolation layer ( 70 ), at least one conductive island ( 60 ), and an isolation trench ( 50 ). The substrate ( 30 ) has a top side ( 32 ) with a plurality of conductive traces ( 36 ) formed thereon. The conductive traces ( 36 ) provide electrical connection to the microstructure ( 26 ). The cap ( 40 ) has a base portion ( 42 ) and a sidewall ( 44 ). The sidewall ( 44 ) extends outwardly from the base portion ( 42 ) to define a recess ( 46 ) in the cap ( 40 ). The isolation layer ( 70 ) is attached between the sidewall ( 44 ) of the cap ( 40 ) and the plurality of conductive traces ( 36 ). The conductive island ( 60 ) is attached to at least one of the plurality of conductive traces ( 36 ). The isolation trench ( 50 ) is positioned between the cap ( 40 ) and the conductive island ( 60 ) and may be unfilled or at least partially filled with an electrically isolating material. There is also a method of making the same microdevice.