RESISTIVE MEMORY INCLUDING REFRESH OPERATION

摘要

A resistive memory including refresh operation is provided to determine refresh time of phase change memory cells in order to prevent data stored in the phase change memory cells from being damaged. A memory device(100) includes an array of resistive memory cells(106a-106d), a counter(119) and a circuit for refreshing the memory cells in response to the counter exceeding a predetermined value. The counter increments in response to each clock cycle of the memory device, and increments in response to each read access of the memory device.