| 摘要 |
A method and a structure of a pattern mask for dry etching are provided to reduce the stress of a mask attached onto a wafer by placing a seal ring including an elastic material between the wafer and mask to indirectly absorb mechanical stress, thereby improving wafer quality. A structure for etching comprises a mask, a cavity, and a seal ring. The mask, which includes non-conductive or conductive material, protects the area of a wafer(100) from being etched, having at least one air opening to expose the area to be etched. The cavity is configured to expose a pixel array(104) when the mask is attached onto the wafer. The seal ring is formed below a lower surface of the mask, and includes an elastic material. |
