| 发明名称 |
Method of forming an interconnect structure diffusion barrier with high nitrogen content |
| 摘要 |
In an interconnect structure of an integrated circuit, a diffusion barrier film in a damascene structure is formed of a film having the composition TaN<SUB>x</SUB>, where x is greater than 1.2 and with a thickness of 0.5 to 5 nm.
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| 申请公布号 |
US7378338(B2) |
申请公布日期 |
2008.05.27 |
| 申请号 |
US20060461220 |
申请日期 |
2006.07.31 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CABRAL, JR. CYRIL;KALDOR STEFFEN K.;KIM HYUNGJUN;ROSSNAGEL STEPHEN M. |
| 分类号 |
H01L21/4763;H01L21/768;H01L23/48;H01L23/532 |
主分类号 |
H01L21/4763 |
| 代理机构 |
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