| 摘要 |
Disclosed is a highly efficient nitride semiconductor device wherein crystallinity of a nitride semiconductor grown on a substrate is improved even when a zinc oxide compound such as MgxZn1-xO (0 <= x <= 0.5) is used for the substrate. This nitride semiconductor device is prevented from film separation or cracks, while having low leakage current. Specifically disclosed is a nitride semiconductor device formed by arranging nitride semiconductor layers on a substrate (1). The substrate (1) is composed of a zinc oxide compound such as MgxZn1-xO (0 <= x <= 0.5), a first nitride semiconductor layer (2) composed of AlyGa1-yN (0.05 <= y <= 0.2) is arranged on the substrate (1), and nitride semiconductor layers (3)-(5) are arranged on the first nitride semiconductor layer (2) for forming a semiconductor device.
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